|
Property |
Ge |
Si |
GaAs |
Diamond |
SiC |
|
Group |
IV |
IV |
III-V |
IV |
IV-IV |
|
Lattice constant [Å] |
5.64 |
5.43 |
5.63 |
3.57 |
3.08 |
|
Bandgap, Eg [eV] |
0.66 |
1.12 |
1.42 |
5.45 |
2.99 |
|
Recombination type |
Indirect |
Indirect |
Direct |
Indirect |
Indirect |
|
Electron mobility, m n [cm2/(V*s)] |
3900 |
1500 |
8500 |
1900 |
400 |
|
Hole mobility, m p [cm2/(V*s)] |
1900 |
600 |
400 |
1600 |
50 |
|
Dielectric constant, e |
16.0 |
11.8 |
13.1 |
5.5 |
10.0 |
|
Electron saturation velocity, Vn(sat) [cm/s] |
6*106 |
1*107 |
1.2*107 |
1.5*107 |
2*107 |
|
Hole saturation velocity, Vp(sat) [cm/s] |
9*106 |
1*107 |
1.05*107 |
1*107 |
|
|
Electron effective mass |
1.1 |
0.068 |
0.57 |
0.45 |
|
|
Hole effective mass |
0.8 |
0.5 |
1.2 |
1.0 |
|
|
Property |
Ge |
Si |
GaAs |
Diamond |
SiC |
|
Thermal conductivity [W/(cm*K)] |
0.64 |
1.41 |
0.455 |
20 |
4 |
|
Specific heat [J/(g*K)] |
0.70 |
0.35 |
0.52 |
0.65 |
|
|
Optical phonon energy [meV] |
63 |
35 |
163 |
100 |
|
|
Longitudinal phonon velocity [cm/s] |
9*105 |
5.2*105 |
1.8*106 |
1.3*106 |
|
|
Thermal expansion coefficient |
5.5*10-6 |
2.5*10-6 |
5.9*10-6 |
0.8*10-6 |
2.9*10-6 |
|
Debye temperature |
645 |
344 |
1860 |
1200 |
|
|
Intrinsic resistivity [W *cm] |
43 |
105 |
108 |
>1015 |
>1015 |
|
Breakdown field [V/cm] |
~105 |
3*105 |
3.5*105 |
1-20*106 |
1-5*106 |
|
Conduction band density of states [cm-3] |
2.8*1019 |
4.7*1017 |
1*1019 |
7*1018 |
|
|
Valence band density of states [cm-3] |
1.04*1019 |
7*1018 |
3*1019 |
2.5*1019 |
|
|
Property |
Ge |
Si |
GaAs |
Diamond |
SiC |
|
Carrier lifetime, t [ns] |
2*105 |
104 (2.5*106) |
~10 |
0.2 |
|
|
Hardness [Kg/mm2] |
780 |
103 |
600 |
104 |
|
|
Melting point [° C] |
941 |
1420 |
1238 |
3800 |